New First Order Raman-active Modes in Few Layered Transition Metal Dichalcogenides
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چکیده
منابع مشابه
New First Order Raman-active Modes in Few Layered Transition Metal Dichalcogenides
Although the main Raman features of semiconducting transition metal dichalcogenides are well known for the monolayer and bulk, there are important differences exhibited by few layered systems which have not been fully addressed. WSe2 samples were synthesized and ab-initio calculations carried out. We calculated phonon dispersions and Raman-active modes in layered systems: WSe2, MoSe2, WS2 and M...
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Pierluigi Cudazzo,1,2 Kari O. Ruotsalainen,3 Christoph J. Sahle,3 Ali Al-Zein,4 Helmuth Berger,5 Efrén Navarro-Moratalla,6 Simo Huotari,3 Matteo Gatti,2,7,8 and Angel Rubio1,2 1Nano-Bio Spectroscopy Group, Departamento Fı́sica de Materiales, Universidad del Paı́s Vasco, Centro de Fı́sica de Materiales CSIC-UPV/EHU-MPC and DIPC, Avenida Tolosa 72, E-20018 San Sebastián, Spain 2European Theoretical ...
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Layered inorganic materials, such as the transition metal dichalcogenides (TMDs), have attracted much attention due to their exceptional electronic and optical properties. Reliable synthesis and characterization of these materials must be developed if these properties are to be exploited. Herein, we present low-frequency Raman analysis of MoS2, MoSe2, WSe2 and WS2 grown by chemical vapour depos...
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Two-dimensional transition metal dichalcogenides provide a unique platform to study excitons in confined structures. Recently, several important aspects of excitons in these materials have been investigated in detail. However, the formation process of excitons from free carriers has yet to be understood. Here we report time-resolved measurements on the exciton formation process in monolayer sam...
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ژورنال
عنوان ژورنال: Scientific Reports
سال: 2014
ISSN: 2045-2322
DOI: 10.1038/srep04215